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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2983
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching application.
FEATURES
* Low on-resistance RDS(on)1 = 20 m (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 27 m (MAX.) (VGS = 4.5 V, ID = 15 A) * Low Ciss Ciss = 1200 pF TYP. * Built-in gate protection diode
ORDERING INFOMATION
PART NUMBER 2SK2983 2SK2983-S 2SK2983-ZJ PACKAGE TO-220AB TO-262 TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note3 Note1
VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg
30 20 30 120 1.5 50 150 -55 to +150
V V A A W W C C
Note2
Total Power Dissipation (TA = 25C) Total Power Dissipation (TC = 25C) Channel Temperature Storage Temperature Notes1. VGS = 0 V 2. VDS = 0 V 3. PW 10 s, Duty Cycle 1 % .
The information in this document is subject to change without notice.
Document No. D12357EJ1V0DS00 (1st edition) Date Published October 1998 NS CP (K) Printed in Japan
(c)
1998
2SK2983
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr ID = 30 A VDD = 24 V VGS = 10 V IF = 30 A, VGS = 0 V IF = 30 A, VGS = 0 V di/dt = 100 A /S TEST CONDITIONS VGS = 10 V, ID = 15 A VGS = 4.5 V, ID = 15 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 15 A VDS = 30 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 15 A VGS(on) = 10 V VDD = 15 V RG = 10 1200 530 250 50 820 100 170 30 4.5 7.5 0.8 35 65 1.0 9.0 MIN. TYP. 13.0 18.0 1.5 19 10 10 MAX. 20.0 27.0 2.0 UNIT m m V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
D.U.T. RL PG. RG RG = 10 VDD
ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS
TEST CIRCUIT 2 GATE CHARGE
D.U.T. IG = 2 mA
VGS(on) 90 %
VGS
Wave Form
RL VDD
0
10 %
PG.
50
VGS 0 = 1 s Duty Cycle 1 %
ID
Wave Form
2
2SK2983
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 70 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
100 80 60 40 20
60 50 40 30 20 10 0 20 40 60 80 100 120 140 160
0
20
40
60
80
100 120 140 160
TC - Case Temperature - C
TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed
FORWARD BIAS SAFE OPERATING AREA 1000
ID(pulse) = 120 A
ID - Drain Current - A
ID - Drain Current - A
100
Lim ite d( VG =1 S 0
200 150 VGS = 10V 100 4.5V 50
V)
ID(DC) = 30 A
PW
Po
=
R
( DS
o
n)
1
m
we
10
rD
10
iss ipa
10 0 m
n
s
m s
s
tio
Lim
ite
d
1 0.1
TC = 25C Single Pulse
1
10
100
0
0.5
1.0
1.5
2.0
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed
ID - Drain Current - A
100
10 TC = 125C 75C 25C -25C 1 VDS=10V 8
0
2
4
6
VGS - Gate to Source Voltage - V
3
2SK2983
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-a) = 83.3C/W
10 Rth(ch-c) = 2.5C/W 1
0.1
0.01 0.001 10 Single Pulse TC = 25C 100 1m 10 m 100 m 1 10 100 1 000
PW - Pulse Width - s FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
1000
VDS =10 V Pulsed
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 60 Pulsed
ID =15 A 7.5 A 3A
100
40
10
Tc = -25C 25C 75C 125C
20
1 1
10
100
1000
0
5
10
15
ID- Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2.0 VDS = 10 V ID = 1 mA
30
VGS = 4.5 V
Pulsed
VGS(off) - Gate to Source Cut-off Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
20
1.5
10 V
1.0
10
0.5
0
0 - 50 0 50 100 150 Tch - Channel Temperature - C
1
10 ID - Drain Current - A
100
4
2SK2983
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
ISD - Diode Forward Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
40
100
30
VGS = 4.5 V 10 V
10
VGS = 0 V
20
1
10 ID = 15 A - 50 0 50 100 150
0.1
0
Tch - Channel Temperature - C
0
1.5 1.0 0.5 VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF
SWITCHING CHARACTERISTICS 1000 tr tf td(off) td(on)
VGS = 0 V f = 1 MHz Ciss
1000
100
Coss 100 Crss
10
10 0.1
1
10
100
1 0.1
1
VDD = 15 V VGS = 10 V RG = 10 10 100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V
di/dt = 100 A/s VGS = 0 V
30 VGS 20 VDD = 24 V 15 V 6V
12 10 8 6
100
10
10 VDS 0 10 20 30
4 2 40
1 0.1
1
10
100
IF - Diode Current - A
QG - Gate Charge - nC
VGS - Gate to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 40 ID = 30 A 14
5
2SK2983
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
3.00.3 10.6 MAX. 10.0 5.9 MIN. 15.5 MAX. 4.8 MAX.
2)TO-262 (TO-220 Fin Cut:MP-25S)
1.00.5
3.60.2
4.8 MAX. 1.30.2
1.30.2
(10) 4
1
2
3
4 123 6.0 MAX.
1.30.2
1.30.2
12.7 MIN.
12.7 MIN.
8.50.2
0.750.3 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
0.750.1 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
3)TO-263 (JEDEC TYPE:MP-25ZJ)
4.8 MAX. 1.30.2 4 1.00.5 8.50.2
(10)
EQUIVALENT CIRCUIT
Drain
5.70.4
1.40.2 0.70.2 2.54 TYP. 1 2
(0
.5R
)
Gate
.8R )
0.50.2
Body Diode
3 2.54 TYP.
(0
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device
6
2.80.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
Gate Protection Diode
Source
2SK2983
[MEMO]
7
2SK2983
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96. 5

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